 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Advance Product Information July 19, 2005 K Band Low Noise Amplifier Key Features * * * * * * * TGA4506 Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm (0.047 x 0.031 x 0.004) in Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA 30 Gain & Return Loss (dB) 20 10 0 -10 -20 -30 -40 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) Primary Applications * Point-to-Point Radio Point-to-MultiPoint Radio LMDS * * Gain ORL IRL 3.0 2.5 Noise Figure 2.0 1.5 1.0 0.5 0.0 20 21 22 23 24 25 26 27 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 1 Advance Product Information July 19, 2005 TGA4506 TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id Ig PIN PD T CH TM TSTG 1/ 2/ 3/ 4/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 5V -1 TO +0.5 V 190 mA 6 mA TBD TBD 150 C 320 C -65 to 150 C 0 0 0 NOTES 2/ 2/ 3/ 3/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. Total current for the entire MMIC. When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs. Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings apply to each individual FET. 5/ 6/ TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 2 Advance Product Information July 19, 2005 TGA4506 TABLE II DC PROBE TESTS (Ta = 25 0C Nominal) SYMBOL VP3 PARAMETER Pinch-off Voltage MINIMUM -1.0 MAXIMUM -0.1 VALUE V Q3 is 300 um FET TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER Drain Voltage, Vd Drain Current, Id Gate Voltage, Vg Small Signal Gain, S21 Input Return Loss, S11 Output Return Loss, S22 Noise Figure, NF Output Power @ 1 dB Compression Gain, P1dB TYPICAL 3.5 60 -0.5 to 0 21 15 11 2.2 12 UNITS V mA V dB dB dB dB dBm TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 3 Advance Product Information July 19, 2005 TGA4506 Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA 24 22 20 18 Gain (dB) 16 14 12 10 8 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) 3.0 2.5 2.0 Noise Figure 1.5 1.0 0.5 0.0 20 21 22 23 24 25 26 27 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 19, 2005 TGA4506 Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA 0 -5 -10 -15 -20 -25 -30 -35 -40 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 15 17 19 21 23 25 27 Frequency (GHz) 29 31 33 35 Input Return Loss (dB) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 5 Advance Product Information July 19, 2005 TGA4506 Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA, Freq @ 24 GHz 23 21 19 Pout (dBm), Gain (dB) 17 15 13 11 9 7 5 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 100 95 Gain 90 85 Ids 80 75 70 65 Pout 60 55 Pin (dBm) Ids (mA) 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information July 19, 2005 TGA4506 Mechanical Drawing .09 [0.003] .22 [0.009] .93 [0.037] 6 1.12 [0.044] .49 [0.019] .74 [0.029] 5 .82 [0.032] .73 [0.029] 2 3 4 7 .41 [0.016] 1 .48 [0.019] .09 [0.004] .00 [0.000] .00 [0.000] .09 [0.004] 11 10 9 8 .08 [0.003] .21 [0.008] .74 [0.029] .88 [0.035] .98 [0.038] Units: millimeters [inches] Thickness: 0.10 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pads. Chip size tolerance: 0.05 [0.002] RF ground through backside Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 Bond Pad #8 Bond Pad #9 Bond Pad #10 Bond Pad #11 RF Input N/C VG1 VG2 N/C N/C RF Output N/C VD VD VD 0.11 x 0.19 0.08 x 0.08 0.08 x 0.08 0.08 x 0.08 0.08 x 0.08 0.08 x 0.08 0.11 x 0.19 0.09 x 0.08 0.09 x 0.08 0.09 x 0.08 0.10 x 0.10 [0.004 x 0.007] [0.003 x 0.003] [0.003 x 0.003] [0.003 x 0.003] [0.003 x 0.003] [0.003 x 0.003] [0.004 x 0.007] [0.004 x 0.003] [0.004 x 0.003] [0.004 x 0.003] [0.004 x 0.004] . GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 1.21 [0.048] TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 7 Advance Product Information July 19, 2005 TGA4506 Chip Assembly Diagram Vg RF In RF Out Vd All three Vd pads (pad # 9, 10, 11 from mechanical drawing) do not need to be connected GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 8 Advance Product Information July 19, 2005 TGA4506 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com 9 |
Price & Availability of TGA4506
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |